BestPrice.gr
  • 10 ΤΜΧ LED RGB CONTROLLER hover image

    10 ΤΜΧ LED RGB CONTROLLER

    2,81€

    RGB LED δίοδος με πολύχρωμη λειτουργία χάρη στο ενσωματωμένο chip εσωτερικά του LED. Η συσκευασία περιλαμβάνει 10 τμχΕνσωματώνει αυτόματο πρόγραμμα εναλλαγής χρωμάτων..

    2659 hover image

    2659

    2,98€

    MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V..

    2N7002 - DMN601K7

    2N7002 - DMN601K7

    2,60€

    Low On-Resistance Rds(on)Low Gate Threshold VoltageLow Input CapacitanceFast Switching SpeedLow Input/Output LeakageCase SOT23..

    389 hover image

    389

    2,98€

    RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @ VGS = 10VMOSFET2VDS = 30VID = 20A @ VGS = 10V..

    39A126

    39A126

    5,95€

    MB39A126PFV Charging Power Controller IC..

    4141 hover image

    4141

    2,98€

    FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications...

    4168 hover image

    4168

    2,98€

    VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V..

    4232 hover image

    4232

    2,98€

    4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness...

    4408 hover image

    4408

    2,98€

    AO4408 N-Channel Enhancement Mode Field Effect TransistorVDS = 30VID = 12A @ VGS = 10V, RDS(on) = 13mΩID = 12A @ VGS = 4.5V, RDS(on) = 16mΩThe AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408 and AO4408L are electrically identical. -RoHS Compliant -AO4408L is Halogen Free..

    4413 hover image

    4413

    2,98€

    P-channel D-SVds = -30VRds(on) = 0.0075 at Vgs = -10VRds(on) = 0.011 at Vgs = -4.5VId = -15A at Vgs = -10VId = -12.3A at Vgs = -4.5V..

    4422 hover image

    4422

    2,98€

    AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin connection to the source, which may beused to bypass the source inductance...

    4430 hover image

    4430

    2,98€

    AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)..

    4435 hover image

    4435

    2,98€

    VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications...

    4456 hover image

    4456

    2,98€

    AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications...

    4459A hover image

    4459A

    2,98€

    Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) < 5mΩID = -23A @ VGS = -4.5V, RDS(on) < 7.75mΩ..

    4466 hover image

    4466

    2,98€

    AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance...

    4468 hover image

    4468

    2,98€

    AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications...

    4488 hover image

    4488

    2,98€

    N-Channel7.9A30VRds(on) = 22 mΩ @ Vgs = 10VRds(on) = 30 mΩ @ Vgs = 4.5VThe 4488 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications...

    4496 hover image

    4496

    2,98€

    AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application...

    4502 hover image

    4502

    2,98€

    N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and conserves energy, making this device idel for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system...

    4511 hover image

    4511

    2,98€

    SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A..

    4606 hover image

    4606

    2,98€

    30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications...

    4704 hover image

    4704

    2,98€

    AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications)...

    4710 hover image

    4710

    2,98€

    VDS (V) = 30VID =12.7A (VGS = 10V)RDS(ON) < 11.8mΩ (VGS = 10V)RDS(ON) < 14.2mΩ (VGS = 4.5V)SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications...

    4800 hover image

    4800

    2,98€

    AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...

    4807 hover image

    4807

    2,98€

    AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications...

    4810 hover image

    4810

    2,98€

    4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A..

    4812 hover image

    4812

    2,98€

    30V Dual N-Channel MOSFETVDS=30VID=6A @ VGS=10VThe AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...

    4825P hover image

    4825P

    2,98€

    AF4825PP-Channel 30-V (D-S) MOSFETVDS = -30VID = -11.5A @ VGS = 10V, RDS(on) = 13mΩID = 9.3A @ VGS = 4.5V, RDS(on) = 19mΩThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system..

    4835B hover image

    4835B

    2,98€

    4835P-Channel 30-V (D-S) MOSFETVDS=-30VID=-9.6A @ VGS=-10VID=-7.5A @ VGS=-4.5V..

    4842 hover image

    4842

    2,98€

    AO484230V Dual N-Channel MOSFETVDS=30VID=7.7A @ VGS=10VThe AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...

    4856 hover image

    4856

    2,98€

    N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω..

    4914 hover image

    4914

    2,98€

    Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID = 7.4A @ VGS = 4.5V, RDS(on) = 27mΩChannel-2VDS = 30VID = 8A @ VGS = 10V, RDS(on) = 20mΩID = 8A @ VGS = 4.5V, RDS(on) = 25mΩShottky Product SummaryVDS = 30VIF = 2AVSD = 0.5V @ 1A..

    4924 hover image

    4924

    2,98€

    AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further...

    4925B

    4925B

    2,98€

    Dual P-Channel D-S modeVDS=-30VID=-7.1A @ VGS=-10VID=-5.5A @ VGS=-4.5V..

    4932 hover image

    4932

    2,98€

    FET1(N-Channel)VDS=30VID=11A (VGS=10V)FET2(N-Channel)VDS=30VID=8AThe AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further...

    4935A hover image

    4935A

    2,98€

    Dual 30V P-Channel PowerTrench MOSFET –7 A, –30 V4935A AO4935A RDS(ON) = 23 mΩ @ VGS = –10 VRDS(ON) = 35 mΩ @ VGS = –4.5 VThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applicationsrequiring a wide range of gave drive voltage ratings (4.5V – 20V)...

    4N60 hover image

    4N60

    2,98€

    4N60 Power MOSFET4A, 600V N-CHANNEL POWER MOSFETVDS = 600VID = 2.2A @ VGS = 10V, RDS(on) < 2.5ΩThe UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits...

    6269ACRZ

    6269ACRZ

    3,72€

    The ISL6269A IC is a Single-Phase Synchronous-Buck PWM controller featuring Intersil's Robust Ripple Regulator (R3) technology that delivers truly superior dynamic response to input voltage and output load transients. Integrated MOSFET drivers and bootstrap diode result in fewer components and smaller implementation area...

    6675 hover image

    6675

    2,98€

    FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A @ VGS = -4.5V, RDS(on) = 21.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs...

    6676AS hover image

    6676AS

    2,98€

    FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology...

    6679AZ hover image

    6679AZ

    2,98€

    FDS6679AZP-Channel PowerTrench® MOSFET -30V, -13A, 9mΩVDS = -30VID = -13A @ VGS = -10V, RDS(on) = 9.3mΩID = -11A @ VGS = -4.5V, RDS(on) = 14.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs...

    6690 hover image

    6690

    2,98€

    FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to th..

    6900 hover image

    6900

    2,98€

    Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS69..

    7326 hover image

    7326

    3,10€

    Si7326DNN-Channel 30-V (D-S) Fast Switching MOSFETVDS=30VID=10A @ VDS=10VID=8A @ VDS=4.5V..

    7401 hover image

    7401

    2,98€

    AON7401 30V P-Channel MOSFETVDS = -30VID = -35A @ VGS = -10V, RDS(on) < 14mΩID = -35A @ VGS = -6V, RDS(on) < 17mΩThe AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications...

    7636 hover image

    7636

    2,98€

    Si7636DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 28A @ VGS = 10V, RDS(on) = 4mΩID = 28A @ VGS = 4.5V, RDS(on) = 4.8mΩ..

    7686 hover image

    7686

    2,98€

    Si7686DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 35A @ VGS = 10V, RDS(on) = 9.5mΩID = 35A @ VGS = 4.5V, RDS(on) = 14mΩ..

    7692 hover image

    7692

    2,98€

    FDMS7692 N-Channel PowerTrench® MOSFET30 V, 7.5 mΩVDS = 30V„ID = 13A, Max rDS(on) = 7.5mΩ at VGS = 10VID = 10A, Max rDS(on) = 13mΩ at VGS = 4.5V Advanced Package and Silicon combination for low rDS(on) and high efficiencyThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi..

    7832 hover image

    7832

    2,98€

    F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A..

    Εμφάνιση 1 έως 50 από 383 (8 Σελ.)