Το καλάθι αγορών είναι άδειο!
0,19€
USB 2.0 Connector Double, down, Silver/White..
0,51€
General Description BD2224G and BD2225G are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2224G and BD2225G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start...
2Volt..
0,88€
DVI Connector - DVI 25P, Nickel, White..
FFC Cable - Ribbon 16 PIN, 1.0mm Pitch (140 x 15mm), C TYPE..
VGA Connector - VGA 15 PIN (straight)..
VGA Connector - VGA 15 PIN (up)..
1,00€
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SMD/SMT Shen Board PCB Socket Connectors..
SMT SMD Soldering Connector..
USB connector 001..
USB CONNECTOR TOSHIBA SATELLITE M805D C660 C660D..
USB connector U003..
USB connector U005..
USB connector u006..
USB connector U011..
USB connector 012..
USB connector U014..
USB connector U015..
USB connector U024..
USB connector U025..
USB connector U026..
USB connector U029..
USB connector u030..
USB connector U032..
USB connector U036..
USB connector u039..
USB connector U041..
USB connector U046..
USB connector U049..
USB connector U052..
USB connector U038..
1,02€
MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V..
MB39A126PFV Charging Power Controller IC..
FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications...
VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V..
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness...
P-channel D-SVds = -30VRds(on) = 0.0075 at Vgs = -10VRds(on) = 0.011 at Vgs = -4.5VId = -15A at Vgs = -10VId = -12.3A at Vgs = -4.5V..
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin connection to the source, which may beused to bypass the source inductance...
AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)..
VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications...
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications...
Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) < 5mΩID = -23A @ VGS = -4.5V, RDS(on) < 7.75mΩ..
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance...
AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications...
N-Channel7.9A30VRds(on) = 22 mΩ @ Vgs = 10VRds(on) = 30 mΩ @ Vgs = 4.5VThe 4488 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications...
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application...
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and conserves energy, making this device idel for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system...
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A..
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications...
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications)...
VDS (V) = 30VID =12.7A (VGS = 10V)RDS(ON) < 11.8mΩ (VGS = 10V)RDS(ON) < 14.2mΩ (VGS = 4.5V)SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications...
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications...
