Το καλάθι αγορών είναι άδειο!
1,72€
MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V..
RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @ VGS = 10VMOSFET2VDS = 30VID = 20A @ VGS = 10V..
MB39A126PFV Charging Power Controller IC..
FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications...
VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V..
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness...
P-channel D-SVds = -30VRds(on) = 0.0075 at Vgs = -10VRds(on) = 0.011 at Vgs = -4.5VId = -15A at Vgs = -10VId = -12.3A at Vgs = -4.5V..
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin connection to the source, which may beused to bypass the source inductance...
AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)..
VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications...
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications...
Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) < 5mΩID = -23A @ VGS = -4.5V, RDS(on) < 7.75mΩ..
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance...
AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications...
N-Channel7.9A30VRds(on) = 22 mΩ @ Vgs = 10VRds(on) = 30 mΩ @ Vgs = 4.5VThe 4488 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications...
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application...
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and conserves energy, making this device idel for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system...
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A..
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications...
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications)...
VDS (V) = 30VID =12.7A (VGS = 10V)RDS(ON) < 11.8mΩ (VGS = 10V)RDS(ON) < 14.2mΩ (VGS = 4.5V)SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications...
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications...
4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A..
30V Dual N-Channel MOSFETVDS=30VID=6A @ VGS=10VThe AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...
AF4825PP-Channel 30-V (D-S) MOSFETVDS = -30VID = -11.5A @ VGS = 10V, RDS(on) = 13mΩID = 9.3A @ VGS = 4.5V, RDS(on) = 19mΩThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system..
4835P-Channel 30-V (D-S) MOSFETVDS=-30VID=-9.6A @ VGS=-10VID=-7.5A @ VGS=-4.5V..
AO484230V Dual N-Channel MOSFETVDS=30VID=7.7A @ VGS=10VThe AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters...
N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω..
Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID = 7.4A @ VGS = 4.5V, RDS(on) = 27mΩChannel-2VDS = 30VID = 8A @ VGS = 10V, RDS(on) = 20mΩID = 8A @ VGS = 4.5V, RDS(on) = 25mΩShottky Product SummaryVDS = 30VIF = 2AVSD = 0.5V @ 1A..
AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further...
Dual P-Channel D-S modeVDS=-30VID=-7.1A @ VGS=-10VID=-5.5A @ VGS=-4.5V..
FET1(N-Channel)VDS=30VID=11A (VGS=10V)FET2(N-Channel)VDS=30VID=8AThe AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further...
Dual 30V P-Channel PowerTrench MOSFET –7 A, –30 V4935A AO4935A RDS(ON) = 23 mΩ @ VGS = –10 VRDS(ON) = 35 mΩ @ VGS = –4.5 VThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applicationsrequiring a wide range of gave drive voltage ratings (4.5V – 20V)...
4N60 Power MOSFET4A, 600V N-CHANNEL POWER MOSFETVDS = 600VID = 2.2A @ VGS = 10V, RDS(on) < 2.5ΩThe UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits...
The ISL6269A IC is a Single-Phase Synchronous-Buck PWM controller featuring Intersil's Robust Ripple Regulator (R3) technology that delivers truly superior dynamic response to input voltage and output load transients. Integrated MOSFET drivers and bootstrap diode result in fewer components and smaller implementation area...
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A @ VGS = -4.5V, RDS(on) = 21.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs...
FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology...
FDS6679AZP-Channel PowerTrench® MOSFET -30V, -13A, 9mΩVDS = -30VID = -13A @ VGS = -10V, RDS(on) = 9.3mΩID = -11A @ VGS = -4.5V, RDS(on) = 14.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs...
FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to th..
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS69..
Si7636DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 28A @ VGS = 10V, RDS(on) = 4mΩID = 28A @ VGS = 4.5V, RDS(on) = 4.8mΩ..
Si7686DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 35A @ VGS = 10V, RDS(on) = 9.5mΩID = 35A @ VGS = 4.5V, RDS(on) = 14mΩ..
FDMS7692 N-Channel PowerTrench® MOSFET30 V, 7.5 mΩVDS = 30VID = 13A, Max rDS(on) = 7.5mΩ at VGS = 10VID = 10A, Max rDS(on) = 13mΩ at VGS = 4.5V Advanced Package and Silicon combination for low rDS(on) and high efficiencyThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switchin..
F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A..
IRF7836PbF N-Channel HEXFET Power MOSFET F7836VDS = 30VID = 17A @ VGS = 10V, RDS(on) = 5.7mΩ..
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V..
OZ8119LNOZ811 is DC/DC controller for the next generation of microprocessor power supplies, their peripherals and chipsets. OZ811 steps down the high battert voltage to low ouput voltages in the range of 0.5V to 2.75V. High efficiency, DC accuracy and excellent transient response make OZ811 the perfect choice for supplying low voltage CPU peripherals, chipset cores, and graphics processors. OZ811 is a constant ripple-current buck controller with powerful integrated drivers able to drive output c..
AP85T03GH/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-252 PackageVDS = 30VID = 75A @ VGS = 10V, RDS(on) = 6mΩThe TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications...
AP85U03GHN-Channel Enhancement Mode Power MOSFET. Package : TO-252(H) Type30V, 75AVDS=30VID=75A @ VGS=10V..
13,19€
..
IRF8736 F8736IRF8736PbFHEXFET Power MOSFETVDS=30VID=18A @ VGS=10V..
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed...
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed...
